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| RB471E Diodes Schottky barrier diode RB471E Applications Low current rectification For switching power supplies External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 1.1+0.2 -0.1 0.80.1 0.3~0.6 Features 1) Small surface mounting dual element parallel type. (SMD5) 2) Low VF.( VF=0.45V Typ. at 100mA ) 3) High reliability. D3G 2.80.2 1.6+0.2 -0.1 0~0.1 0.3 +0.1 -0.05 (All leads have same dimentions) +0.1 0.15 -0.06 Construction Silicon epitaxial planar ROHM : SMD5 EIAJ : SC - 74A JEDEC : - Circuit Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 0.1 1 125 -40~+125 Unit V V A A C C RB471E Diodes Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR CT Min. - - - - Typ. 0.28 0.45 1 6.0 Max. 0.34 0.55 30 - Unit V V A pF IF=10mA IF=100mA VR=10V VR=10V, f=1MHz Conditions Note) ESD sensitive product handling required. Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 Typ. pulse measurement 10m Ta=125C Typ. pulse measurement 100 FORWARD CURRENT : IF (A) 100m REVERSE : CURRENT : IR (A) 1m 10 10m 100 Ta 75 1m =1 25 C C 25 -2 C 5 C 75C 10 25C 1 100 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) Fig 4. Derating curve (mounting on glass epoxy PCBs) This datasheet has been download from: www..com Datasheets for electronics components. |
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